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  production specification medium power transistor 2SB1182 w006 www.gmesemi.com rev.a 1 features ? low v ce(sat) . v ce(sat) =-0.5v(typ)(i c /i b =-2a/-0.2a) ? complements the 2sd1758. applications ? epitaxial planar type. ? pnp silicon transistor. to-252 maximum rating operating temperature range applies unless otherwise specified symbol parameter value units v cbo collector-base volage -40 v v ceo collector-emitter voltage -32 v v ebo emitter-base voltage -5 v i c collector current -2(dc) a -3(pulse) a p c collector power dissipation 1.5 w t j ,t stg junction and storage temperature range -55 to +150 pb lead-free
production specification medium power transistor 2SB1182 w006 www.gmesemi.com rev.a 2 electrical characteristics @ ta=25 unless otherwise specified parameter symbol test conditions min typ max unit collector-base breakdown voltage v cbo i c =-50ua,i e =0 -40 v collector-emitter breakdown voltage v ceo i c =-1ma,i b =0 -32 v emitter-base breakdown voltage v ebo i e =-50ua,i c =0 -5 v collector cut-off current i cbo v cb =-20v,i e =0 -1 ua emitter cut-off current i ebo v ebo =-4v,i c =0 -1 ua dc current gain h fe v ce =-3v,i c =-0.5a 120 390 collector-emitter saturation voltage v ce(sat) i c =-2a,i b =-0.2a -0.5 -0.8 v transition frequency f t v ce =-5v,i e =-0.5a f=30mhz 100 mhz collector output capacitance c ob v cb =-10v,i e =0a,f=1mhz 50 pf classification of h fe(1) rank q r range 120-270 180-390 typical characteristics @ ta=25 unless otherwise specified
production specification medium power transistor 2SB1182 w006 www.gmesemi.com rev.a 3
production specification medium power transistor 2SB1182 w006 www.gmesemi.com rev.a 4 package outline plastic surface mounted package to-252 soldering footprint unit :mm package information device package shipping 2SB1182 to-252 80pcs/tube 2500pcs/tape&reel to-252 a 4.95 5.59 b 5.40 6.63 c 6.05 7.10 d 2.20 2.40 e 0.40 0.61 f 8.80 10.60 g 5.35 typ. h 1.98 2.59 i 0.50 0.90 j 0.50 1.20 k 0.45 0.89 all dimensions in mm 6.40 6.80 2.70 1.80 1.50 2.30 2.30 a c b d g h k f i j e


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